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Electronics Engineering
QUESTION #11698
Question 1
A forward-biased silicon diode under test measures $V_F = 0.3\,\text{V}$ on a DMM diode check. The most likely explanation is:
Correct Answer Explanation
Schottky barrier diodes have a metal-semiconductor junction with a lower forward voltage drop of 0.2–0.4 V compared to silicon p-n junction diodes (~0.6–0.7 V) or germanium diodes (~0.2–0.3 V). Schottky diodes are preferred in high-frequency rectification and protection circuits due to their low $V_F$ and fast switching speed.
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